Semiconductor memory device

ABSTRACT

A semiconductor memory device having a multiport memory includes a plurality of memory cells MC arranged in columns and rows, a plurality of first word lines WLA 0 –WLAn connected to a first port  13   a , and a plurality of second word lines WLB 0 –WLBn connected to a second port  13   b . Each of a plurality of first word lines WLA 0 –WLAn and each of a plurality of second word lines WLB 0 –WLBn are arranged alternately in a planar layout. A semiconductor memory device is thus obtained that allows a coupling noise between interconnections to be reduced without an increase in memory cell area.

RELATED APPLICATION

This application is a continuation of application Ser. No. 11/126,360filed May 11, 2005 now U.S. Pat. No. 7,002,826, which is a continuationof application Ser. No. 10/691,707 filed Oct. 24, 2003 now U.S. Pat. No.6,917,560.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor memory device, and moreparticularly to an SRAM (Static Random Access Memory) semiconductormemory device having a multiport memory or a content addressable memory.

2. Description of the Background Art

In multiport memory cells, bit lines or word lines of each port areoften arranged adjacent to each other. Therefore, the couplingcapacitance between interconnections may cause crosstalk, resulting in amalfunction.

Japanese Patent Laying-Open No. 2000-12704, for example, proposes amethod of avoiding interference of word lines with each other byproviding GND interconnections for write word lines and read word lines.Similarly, Japanese Patent Laying-Open No. 2000-236029 proposes a methodof avoiding interference between word lines by providing a GNDinterconnection between rows of memory cells adjacent to each other.

Both of these approaches require a sufficient space between a word lineand a word line, since a shielding interconnection is provided betweenword lines. If there is originally a gap between word lines in memorycells, provision of the shielding interconnection does not increase thearea. In a layout configuration of a two-port memory cell that is longin a lateral direction, as shown in Japanese Patent Laying-Open Nos.2002-43441 and 2002-237539, for example, the word lines connected toeach port are arranged adjacent to each other, and if the spacetherebetween is small, there is no room to be provided with theshielding interconnection.

In view of the forgoing, if the shielding interconnection is inserted inthe layout configuration of the laterally long two-port memory cell, thememory cell area is inevitably increased, accordingly.

If the shielding interconnection is not provided, the increased couplingcapacitance between word lines as described above increases the couplingnoise, which causes a malfunction.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor memorydevice allowing coupling noise between interconnections to be reducedwithout increasing a memory cell area.

In accordance with the present invention, a semiconductor memory devicehaving a multiport memory includes a plurality of memory cells, aplurality of first word lines, and a plurality of second word lines. Theplurality of memory cells are arranged in columns and rows. Each of theplurality of first word lines is arranged corresponding to each row, iselectrically connected to the memory cell, and is selected in accordancewith an address signal from a first port when accessed from the firstport. Each of the plurality of second word lines is arrangedcorresponding to each row, is electrically connected to the memory cell,and is selected in accordance with an address signal from a second portwhen accessed from the second port. Each of the plurality of first wordlines and each of the plurality of second word lines are arrangedalternately in a planar layout.

In the semiconductor memory device in accordance with the presentinvention, each of a plurality of first word lines and each of aplurality of second word lines are arranged alternately in a planarlayout. Therefore, a word line adjacent to one side of any given wordline and a word line adjacent to the other side thereof belong to thesame port. These word lines of the same port are not selected at a timeby a row select address signal, and one of these word lines is fixed ata “L (low)” level by a word line driver circuit. Thus, the couplingcapacitance on the one side of the word line changes, while the couplingcapacitance on the other side does not change, thereby having no effecton the potential on that word line. Therefore, the word line can be lessaffected by the coupling capacitance as compared with the case where theword line is affected by the coupling capacitance on both sides.Accordingly, it is possible to reduce the coupling noise and to preventa malfunction without increasing the memory cell area.

In accordance with another aspect of the present invention, asemiconductor memory device having a content addressable memory includesa plurality of content addressable memory cells, a plurality of wordlines, and a plurality of match lines. The plurality of contentaddressable memory cells are arranged in columns and rows. Each of theplurality of word lines is arranged corresponding to each row and iselectrically connected to the content addressable memory cell. Each ofthe plurality of match lines is arranged corresponding to each row andis electrically connected to the content addressable memory cell. In afirst row and a second row adjacent to each other, the word line in thefirst row and the word line in the second row are adjacent to eachother, and in the second row and a third row adjacent to each other, thematch line in the second row and the match line in the third row areadjacent to each other.

In the semiconductor memory device in accordance with another aspect ofthe present invention, in a first row and a second row adjacent to eachother, the word line in the first row and the word line in the secondrow are adjacent to each other, and in the second row and a third rowadjacent to each other, a match line in the second row and a match linein the third row are adjacent to each other. Therefore, the word line isless affected by the coupling capacitance, thereby reducing the couplingnoise and preventing a malfunction without increasing the memory cellarea.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing an equivalent circuit of a two-portSRAM memory cell in a first embodiment of the present invention.

FIG. 2 is a diagram showing a manner of arrangement of the two-port SRAMmemory cells MC in FIG. 1.

FIG. 3 is a planar layout diagram showing an arrangement of word lineswhere two-port SRAM memory cells are arranged in three rows in the firstembodiment of the present invention.

FIG. 4 is a diagram showing a circuit configuration of three bits whereword lines connected to the same port are arranged to be adjacent toeach other in the two-port memory cells.

FIG. 5 is an operational waveform diagram of the word lines in thecircuit configuration in FIG. 4.

FIG. 6 is a diagram showing a circuit configuration of three bits of thetwo-port SRAM memory cells in the first embodiment of the presentinvention.

FIG. 7 is an operational waveform diagram of the word lines in thecircuit configuration in FIG. 6.

FIG. 8 is a planar view showing an exemplary layout configuration from atransistor formation layer to a first metal interconnection layer wheretwo bits of the two-port SRAM memory cells are arranged in the samecolumn in a second embodiment of the present invention.

FIG. 9 is a planar view showing an exemplary layout configuration from afirst via hole to a third metal interconnection layer where two bits ofthe two-port SRAM memory cells are arranged in the same column in thesecond embodiment of the present invention.

FIG. 10 is a circuit diagram showing an equivalent circuit of two bitsof memory cells in FIGS. 8 and 9.

FIG. 11 is a circuit diagram showing an equivalent circuit of thetwo-port SRAM memory cell in a third embodiment of the presentinvention.

FIG. 12 is a planar view showing an exemplary layout configuration froma transistor formation layer to a first metal interconnection layerwhere two bits of the two-port SRAM memory cells are arranged in thesame column in the third embodiment of the present invention.

FIG. 13 is a planar view showing an exemplary layout configuration froma first via hole to a third metal interconnection layer where two bitsof the two-port SRAM memory cells are arranged in the same column in thethird embodiment of the present invention.

FIG. 14 is a circuit diagram showing an equivalent circuit of two bitsof memory cells in FIGS. 12 and 13.

FIG. 15 is a circuit diagram showing an equivalent circuit of a memorycell in a content addressable memory in a fourth embodiment of thepresent invention.

FIG. 16 is a planar layout diagram showing an arrangement of word linesand match lines where the content addressable memory cells are arrangedin three rows in the fourth embodiment of the present invention.

FIG. 17 is a diagram showing a circuit configuration of three bits inthe content addressable memory in the fourth embodiment of the presentinvention.

FIG. 18 is a planar view showing an exemplary layout configuration froma transistor formation layer to a first metal interconnection layerwhere two bits of the content addressable memory cells are arranged inthe same column in the fourth embodiment of the present invention.

FIG. 19 is a planar view showing an exemplary layout configuration froma first via hole to a third metal interconnection layer where two bitsof the content addressable memory cells are arranged in the same columnin the fourth embodiment of the present invention.

FIG. 20 is a circuit diagram showing an equivalent circuit of thecontent addressable memory cell in a fifth embodiment of the presentinvention.

FIG. 21 is a diagram showing a circuit configuration of three bits inthe content addressable memory in the fifth embodiment of the presentinvention.

FIG. 22 is a planar view showing an exemplary layout configuration froma transistor formation layer to a first metal interconnection layerwhere two bits of the content addressable memory cells are arranged inthe same column in the fifth embodiment of the present invention.

FIG. 23 is a planar view showing an exemplary layout configuration froma first via hole to a third metal interconnection layer where two bitsof the content addressable memory cells are arranged in the same columnin the fifth embodiment of the present invention.

FIG. 24 is a cross sectional view schematically showing a configurationof a semiconductor memory device in a sixth embodiment of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following, embodiments of the present invention will be describedwith reference to the figures.

(First Embodiment)

Referring to FIG. 1, memory cell MC has two driver transistors N1, N2,two load transistors P1, P2, and four access transistors N3 a, N3 b, N4a, N4 b.

Each of two driver transistors N1, N2, and four access transistors N3 a,N3 b, N4 a, N4 b is formed of an nMOS transistor, and each of two loadtransistors P1, P2 is formed of a pMOS transistor.

NMOS transistor N1 and pMOS transistor P1 constitute a first CMOS(Complementary Metal Oxide Semiconductor) inverter I1, and nMOStransistor N2 and pMOS transistor P2 constitute a second CMOS inverterI2. A flip-flop circuit and storage nodes Na, Nb are formed byconnecting the output terminal of one of first and second inverters I1and I2 to the input terminal of the other.

The source of each of driver transistors N1, N2 is connected to a GNDpotential and the source of each of load transistors P1, P2 is connectedto a VDD potential.

The source, gate, and drain of nMOS transistor N3 a are connected to onestorage terminal Na, a first word line WLA, and a first positive-phasebit line BLA, respectively. The source, gate, and drain of nMOStransistor N3 b is connected to one storage terminal Na, a second wordline WLB, and a second positive-phase bit line BLB, respectively.

The source, gate, and drain of nMOS transistor N4 a are connected to onestorage terminals Nb, first word line WLA, and a first negative-phasebit line /BLA, respectively. The source, gate, and drain of nMOStransistor N4 b are connected to one storage terminal Nb, second wordline WLB, and a second negative-phase bit line /BLB, respectively.

In other words, reading of a stored value by a first port is enabled byselecting first word line WLA, first positive-phase bit line BLA, andfirst negative-phase bit line /BLA. Reading of a stored value by asecond port is enabled by selecting second word line WLB, secondpositive-phase bit line BLB, and second negative-phase bit line /BLB.

A two-port SRAM memory cell circuit is configured by the connection asdescribed above.

Referring to FIG. 2, two-port SRAM memory cells MC shown in FIG. 1 arearranged in columns and rows (in matrix) in a memory array.Corresponding to each row of the memory array, each of first word linesWLA0–WLAn and each of second word lines WLB0–WLBn are arranged. In otherwords, for each row, first word line WLA and second word line WLB arearranged as a pair.

Each of first word lines WLA0–WLAn is selected, for example, through afirst port control 12 a by a first port word driver 11 a in accordancewith an address signal from a first port 13 a. Each of second word linesWLB0–WLBn is selected, for example, through a second port control 12 bby a second port word driver 11 b in accordance with an address signalfrom a second port 13 b.

It is noted that bit lines are not shown in FIG. 2 for convenience ofillustration. Furthermore, although first port word driver 11 a is shownto the left of the memory cell array in the figure and second port worddriver 11 b is shown to the right of the memory cell array in thefigure, the positions at which first and second port word drivers 11 a,11 b are arranged are not limited thereto. Each of first port 13 a andsecond port 13 b is formed of input/output pins and input/outputcircuits.

Referring to FIG. 3, in the present embodiment, each of word linesWLA0–WLA2 electrically connected to the first port and each of wordlines WLB0–WLB2 electrically connected to the second port are arrangedalternately in the planar layout. In other words, the word lines areplanarly arranged in the order of word line WLA0, word line WLB0, wordline WLA1, word line WLB1, word line WLA2, and word line WLB2, fromabove in FIG. 3.

In accordance with the present embodiment, each of word lines WLA0–WLA2and each of word lines WLB0–WLB2 are alternately arranged in the planarlayout as described above, so that the coupling noise between theinterconnections can be reduced without an increase in memory cell area.This will be described below.

First, for comparison with the present embodiment, a two-port SRAMmemory cell with a word line arrangement in which word lines connectedto the same port are adjacent to each other as shown in FIG. 4 will bedescribed. FIG. 4 shows a circuit configuration of three bits where wordlines connected to the same port are arranged adjacent to each other, inthe two-port SRAM memory cells.

Referring to FIG. 4, in the case of this word line arrangement, the wordlines from the first row to the third row, for example, are arranged inthe order of word line WLA0, word line WLB0, word line WLB1, word lineWLA1, word line WLA2, word line WLB2. Attention will be made to wordline WLB0 of the second port in the first row. This word line WLB0 isadjacent to word line WLA0 on the one side and is adjacent to word lineWLB1 on the other side. In other words, a word line adjacent to one sideof any given word line belong to the same port and another row, and aword line adjacent to the other side thereof belongs to another port andthe same row.

In such a word line arrangement, assume that the first row is selectedby the row select address signal of the first port and word line WLA0 israised from L (low) level to H (high) level. Also assume that atapproximately the same timing, the second row is selected by the rowselect address signal of the second port and word line WLB1 is raisedfrom L level to H level.

The potential on word line WLB0 sandwiched between word line WLA0 andword line WLB1 is then affected by a coupling capacitance C1 causedbetween word lines WLB0 and WLA0 and a coupling capacitance C2 betweenword lines WLB0 and WLB1. As a result, the potential on word line WLB0tends to change in the same manner as word lines WLA0, WLB1, as shown inFIG. 5.

Since word line WLB0 is driven to L level by the word line driver, thepotential on word line WLB0 is momentarily raised but soon returns to Llevel. However, the change of the potential from L level, which iscaused on word line WLB0 by the coupling capacitance, causes a couplingnoise. If this noise occurs, access transistors N3 b, N4 b of memorycell MC0 connected to word line WLB0 will open momentarily. Therefore,it is likely that memory cell MC0 is erroneously written and the holddata in memory cell MC0 is corrupted.

On the contrary, in the present embodiment, as shown in FIG. 3, each ofword lines WLA0–WLA2 and each of word lines WLB0–WLB2 are arrangedalternately in the planar layout. Attention will be paid to word lineWLB0 of the second port in the first row. This word line WLB0 isadjacent to word line WLA0 on one side and is adjacent to word line WLA1on the other side. In other words, a word line adjacent to one side ofany given word line and a word line adjacent to the other side thereofbelong to the same port.

These word lines of the same port are not selected at a time by a rowselect address signal, and one of these word lines is fixed at L levelby the word line driver circuit. Therefore, when word line WLA0 adjacentto the one side of word line WLB0 is selected, word line WLA1 adjacentto the other side is not selected.

Referring to FIG. 6, the change of the potential on word line WLA0 onthe one side of word line WLB0 causes the change of coupling capacitanceC1 between word line WLB0 and word line WLA0. Coupling capacitance C2between word line WLB0 and word line WLA1, however, does not change anddoes not affect the potential on word line WLB0, since the potential onword line WLA1 on the other side of word line WLB0 is constantly at Llevel. Accordingly, in the present embodiment, since word line WLB0 ishardly affected by the coupling capacitance as shown in FIG. 7, it ispossible to reduce the coupling noise as compared with the case shown inFIGS. 4 and 5, and to prevent a malfunction without increasing thememory cell area.

(Second Embodiment)

In the present embodiment, an exemplary layout configuration to realizethe word line arrangement in the first embodiment will specifically bedescribed.

A layout configuration of memory cell MC1 of one bit will be described.

Referring mainly to FIG. 8, one n-type well region NW as well as twop-type well regions PW0, PW1 with the n-type well region NW interposedtherebetween are formed on a surface of a semiconductor substrate. PMOStransistors P1, P2 are formed in n-type well NW. NMOS transistors N1, N3b, N4 b are formed in p-type well PW0, and nMOS, transistors N2, N3 a,N4 a are formed in p-type well PW1.

PMOS transistor P1 has the source formed of a p-type diffusion regionFL13, the drain formed of a p-type diffusion region FL14, and gate PL1.PMOS transistor P2 has the source formed of a p-type diffusion regionFL11, the drain formed of a p-type diffusion region FL12, and gate PL2.

NMOS transistor N1 has the source formed of an n-type diffusion regionFL1, the drain formed of an n-type diffusion region FL2, and gate PL1.NMOS transistor N2 has the source formed of an n-type diffusion regionFL4, the drain formed of an n-type diffusion region FL5, and gate PL2.

NMOS transistor N3 a has the source formed of an n-type diffusion regionFL7, the drain formed of an n-type diffusion region FL8, and gate PL4.NMOS transistor N3 b has the source formed of an n-type diffusion regionFL2, the drain formed of an n-type diffusion region FL3, and gate PL3.

NMOS transistor N4 a has the source formed of an n-type diffusion regionFL5, the drain formed of an n-type diffusion region FL6, and gate PL4.NMOS transistor N4 b has the source formed of an n-type diffusion regionFL9, the drain formed of an n-type diffusion region FL10, and gate PL3.

Each n-type diffusion region is formed by implanting an n-type impurityin the active region of p-type wells PW0, PW1. Each p-type diffusionregion-is formed by implanting a p-type impurity in the active region ofn-type well NW.

N-type diffusion region FL2 of nMOS transistor N1 and n-type diffusionregion FL2 of nMOS transistor N3 b are formed of a common diffusionregion. N-type diffusion region FL5 of nMOS transistor N2 and n-typediffusion region FL5 of nMOS transistor N4 a are formed of a commondiffusion region.

Gates PL1 of pMOS transistor P1 and nMOS transistor N1 are formed of acommon doped polysilicon (polysilicon implanted with an impurity)interconnection. Gates PL2 of pMOS transistor P2 and nMOS transistor N2are formed of a common doped polysilicon interconnection. Gates PL4 ofnMOS transistors N3 a and N4 a are formed of a common doped polysiliconinterconnection. Gates PL3 of nMOS transistors N3 b and N4 b are formedof a common doped polysilicon interconnection.

Gate PL1, p-type diffusion region FL12, and n-type diffusion region FL5are electrically connected at low impedance by a first metalinterconnection corresponding to storage terminal Na through a sharedcontact SC and a contact C1. Gate PL1 and n-type diffusion region FL9are electrically connected by first metal interconnection CSC throughshared contact SC.

Gate PL2, p-type diffusion region FL14, and n-type diffusion region FL2are electrically connected at low impedance by a first metalinterconnection corresponding to storage terminal Nb through sharedcontact SC and contact C1. Gate PL2 and n-type diffusion region FL7 areelectrically connected by first metal interconnection CSC through sharedcontact SC.

Referring mainly to FIGS. 8 and 9, p-type diffusion regions FL11 andFL13 are electrically connected to separate first metal interconnectionsVDD1 through contacts C1. Each of the separate first metalinterconnections VDD1 is electrically connected to a second metalinterconnection serving as VDD potential though first via hole T1.

N-type diffusion region FL8 is electrically connected to a first metalinterconnection BLA1 through contact C1, and the first metalinterconnection BLA1 is electrically connected to a second metalinterconnection serving as a bit line BLA through first via hole T1.N-type diffusion region FL6 is electrically connected to a first metalinterconnection /BLA1 through contact C1, and the first metalinterconnection /BLA1 is electrically connected to a second metalinterconnection serving as bit line /BLA through first via hole T1.N-type diffusion region FL4 is electrically connected to a first metalinterconnection GND1 through contact C1, and the first metalinterconnection GND1 is electrically connected to a second metalinterconnection serving as a ground line GND through first via hole T1.

N-type diffusion region FL3 is electrically connected to a first-metalinterconnection BLB1 through contact C1, and the first metalinterconnection BLB1 is electrically connected to a second metalinterconnection serving as bit line BLB through first via hole T1.N-type diffusion region FL10 is electrically connected to a first metalinterconnection /BLB1 through contact C1, and the first metalinterconnection /BLB1 is electrically connected to a second metalinterconnection serving as bit line /BLB through first via hole T1.N-type diffusion region FL1 is electrically connected to a first metalinterconnection GND1 through contact C1, and the first metalinterconnection GND1 is electrically connected to a second metalinterconnection serving as ground line GND through first via hole T1.

All the second metal interconnections arranged in the memory cell regionare arranged parallel to each other, and extend in the directionparallel to the boundary line between n-type well NW and p-type well PW0and the boundary line between n-type well NW and p-type well PW1.

Gate PL4 is electrically connected to a first metal interconnection WLAathrough a gate contact GC, the first metal interconnection WLAa iselectrically connected to a second metal interconnection WLAb throughfirst via hole T1, and the second metal interconnection WLAb iselectrically connected to a third metal interconnection serving as wordline WLA1 through a second via hole T2. Gate PL3 is electricallyconnected to a first metal interconnection WLBa through gate contact GC,the first metal interconnection WLBa is electrically connected to asecond metal interconnection WLBb through first via hole T1, and thesecond metal interconnection WLBb is electrically connected to a thirdmetal interconnection serving as word line WLB1 through second via holeT2.

All the third metal interconnections arranged in the memory cell regionare also arranged parallel to each other, and extend in the directionorthogonal to the boundary line between n-type well NW and p-type wellPW0 and the boundary line between n-type well NW and p-type well PW1.

The layout configuration of memory cells MC1 and MC2 adjacent to eachother will be described.

Referring to FIGS. 8 and 9, the planar layout configuration from thetransistor formation layer to the second metal interconnection layer ofmemory cell MC2 adjacent to memory cell MC1 is line-symmetric to theplanar layout of memory cell MC1 with respect to the boundary line (lineX—X) between memory cell MC1 and memory cell MC2. As a result, GND line,VDD line, and bit line pairs BLA, /BLA, BLB, /BLB formed of the secondmetal interconnection layer are shared between memory cells adjacent toeach other (for example between MC1 and MC2). Because of the linesymmetrical arrangement, mismatch of characteristics such as acapacitance value can be minimized.

On the other hand, the planar layout configuration of second via hole T2and the third metal interconnection layer in memory cell MC2 adjacent tomemory cell MC1 is the same as the planar layout configuration of memorycell MC1. More specifically, in both memory cells MC1 and MC2, wordlines WLA1, WLA2 formed of the third metal interconnection layerconnected to the first port are arranged above word lines WLB1, WLB2,respectively, formed of the third metal interconnection layer connectedto the second port, in the figure. In other words, each of word linesWLA1, WLA2 formed of the third metal interconnection layer connected tothe first port and each of word lines WLB1, WLB2 formed of the thirdmetal interconnection layer connected to the second port are arrangedalternately.

The layout of memory cells configured as described above can reduce thenoise on the word lines caused by the coupling capacitance and canprevent a malfunction without an increase in memory cell area, asdescribed in the first embodiment.

(Third Embodiment)

In the present embodiment, a two-port SRAM memory cell with a read-onlyport, which is a different type from the first and second embodiments,will be described.

Referring to FIG. 11, this memory cell MC has two driver transistors N1,N2, two load transistors P1, P2, two access transistors N3, N4, and nMOStransistors N5, N6 constituting a read-only port.

Each of two driver transistors N1, N2, two access transistors N3, N4,and transistors N5, N6 is formed of an nMOS transistor, and each of twoload transistors P1, P2 is formed of a pMOS transistor.

NMOS transistor N1 and pMOS transistor P1 constitute a first CMOSinverter I1, and nMOS transistor N2 and pMOS transistor P2 constitute asecond CMOS inverter I2. A flip-flop circuit as well as storage nodesNa, Nb are formed by connecting the output terminal of one of first andsecond inverters I1, I2 to the input terminal of the other.

The source of each of driver transistors N1, N2 is connected to GNDpotential, and the source of each of load transistors P1, P2 isconnected to VDD potential.

The source, gate, and drain of nMOS transistor N3 are connected to onestorage terminal Na, write word line WWL, and one write bit line WBL,respectively. The source, gate, and drain of nMOS transistor N4 areconnected to the other storage terminal Nb, write word line WL, and theother write bit line /WBL.

NMOS transistors N3, N4, write word line WWL, and write bit line pairWBL, /WBL are connected to the first port. A stable writing/readingoperation in a differential manner can be performed since two accesstransistors in a memory cell are connected to the first port in thisway.

NMOS transistors N5, N6, read bit line RBL, and read word line RWL areconnected to the second port. The drain of nMOS transistor N5 and thesource of nMOS transistor N6 are connected together. The source and gateof nMOS transistor N5 are connected to ground line GND2 and storage nodeNb, respectively. The drain and gate of nMOS transistor N6 are connectedto read bit line RBL and read word line RWL, respectively.

The two-port SRAM memory cell circuit with a read-only port isconfigured by the connection as described above.

An exemplary circuit operation will now be described using an equivalentcircuit diagram in FIG. 11.

First, a case where hold data is read at the first port will bedescribed. Word line WWL is initially at “L” level and access transistorN3 is in the hold state of OFF state. Upon the start of the readingoperation, word line WWL goes to “H” level, and access transistor N3enters ON state. Then, storage node Na and bit line WBL becomeelectrically connected to each other. Assuming that storage node Naholds “H” level, “H” level is read onto bit line WBL. On the contrary,assuming that storage node Na holds “L” level, “L” level is read ontobit line WBL. Thereafter, word line WWL returns to “L” level and accesstransistor N3 enters OFF state to return to the hold state again.

A writing operation at the first port will now be described. Where “H”level is written to storage node Na, bit line WBL is driven at “H”level, and where “L” level is written, bit line WBL is driven at “L”level, by the driver circuit (not shown). When word line WWL is drivenfrom “L” level to “H” level, access transistor N3 changes from OFF stateto ON state, and bit line WBL and storage node Na become electricallyconnected to each other. Since bit line WBL is driven strongly, storagenode Na changes to the level on bit line WBL, irrespective of the holddata. For example, when bit line WBL is driven at “L” level, storagenode Na also goes to “L” level and the opposite storage node Nb goes to“H” level. On the contrary, when bit line WBL is driven at “H” level,storage node Na also goes to “H” level and the opposite storage node Nbgoes to “L” level. Thereafter, as write word line WWL goes from “H”level to “L” level, and access transistor N3 enters OFF state, each ofstorage nodes Na, Nb is stabilized at the written level thereby holdingdata. The writing operation is now completed.

A reading operation at the second port will now be described.

In a case of the non-reading state, read bit line RBL is precharged to“H” level in advance. Read word line RWL is at “L” level. Namely, nMOStransistor N6 is in OFF state. Assuming that storage node Na is at Hlevel, nMOS transistor N5 is in ON state.

Upon the start of the reading operation, when read word line RWL changesfrom “L” level to “H” level, nMOS transistor N6 changes from OFF stateto ON state. Then, read bit line RBL and ground line GND2 areelectrically rendered conductive through nMOS transistors N5, N6, sothat read bit line RBL changes from “H” level of the precharge level to“L” level, and “L” level of the inversion data of storage node Na isread out. Thereafter, when word line RWL returns from “H” level to “L”level, nMOS transistor N6 enters OFF state, and read bit line RBL iselectrically cut off from ground line GND2. Then, read bit line RBL isprecharged to “H” level again for the next reading operation, therebycompleting the reading operation.

On the other hand, assuming that storage node Na is at “L” level, nMOStransistor N5 is in OFF state. Upon the start of the reading operation,when read word line RWL changes from “L” level to “H” level, nMOStransistor N6 changes from OFF state to ON state while nMOS transistorN5 is in OFF state, so that read bit line RBL is not changed from “H”level of the precharge level. Thus, “H” level of the inversion data ofstorage node Na is read out. Thereafter, word line RWL returns from “H”level to “L” level, thereby completing the reading operation.

As described above, a writing operation is not allowed and only areading operation is performed at the second port.

The planar layout configuration of the aforementioned two-port SRAMmemory cell will now be described.

First, the layout configuration of memory cell MC1 of one bit will bedescribed.

Referring mainly to FIG. 12, one n-type well region NW, and two p-typewell regions PW0, PW1 with this n-type well region NW interposedtherebetween are formed on a surface of a semiconductor substrate. PMOStransistors P1, P2 are formed in n-type well NW. NMOS transistors N1,N3, N4 are formed in p-type well PW0, and nMOS transistors N2, N5, N6are formed in p-type well PW1.

PMOS transistor P1 has the source formed of a p-type diffusion regionFL112, the drain formed of FL110, and gate PL1. PMOS transistor P2 hasthe source formed of a p-type diffusion region FL113, the drain formedof a p-type diffusion region FL111, and gate PL2.

NMOS transistor N1 has the source formed of an n-type diffusion regionFL200, the drain formed of an n-type diffusion region FL210, and gatePL1. NMOS transistor N2 has the source formed of an n-type diffusionregion FL201, the drain formed of an n-type diffusion region FL211, andgate PL2.

NMOS transistor N3 has the source formed of an n-type diffusion regionFL210, the drain formed of an n-type diffusion region FL220, and gatePL3. nMOS transistor N4 has the source formed of an n-type diffusionregion FL212, the drain formed of an n-type diffusion region FL221, andgate PL3.

NMOS transistor N5 has the source and drain formed of a pair of n-typediffusion regions FL202 and FL240, and gate PL2. NMOS transistor N6 hasthe source and drain formed of a pair of n-type diffusion regions FL240and FL230, and gate PL4.

Each n-type diffusion region is formed by implanting an n-type impurityinto the active region of p-type wells PW0, PW1. Each p-type diffusionregion is formed by implanting a p-type impurity into the active regionof n-type well NW.

N-type diffusion region FL210 of nMOS transistor N1 and n-type diffusionregion FL210 of nMOS transistor N3 are formed of a common diffusionregion. N-type diffusion region FL240 of nMOS transistor N5 and n-typediffusion region FL240 of nMOS transistor N6 are formed of a commondiffusion region.

Gates PL1 of pMOS transistor P1 and nMOS transistor N1 are formed of acommon doped polysilicon interconnection. Gates PL2 of pMOS transistorP2 and nMOS transistors N2 and N5 are formed of a common dopedpolysilicon interconnection. Gates PL3 of nMOS transistors N3 and N4 areformed of a common doped polysilicon interconnection.

Gate PL2, p-type diffusion region FL110, and n-type diffusion regionFL210 are electrically connected at low impedance by a first metalinterconnection corresponding to storage terminal Na through contactholes. Gate PL1, p-type diffusion region FL111, and n-type diffusionregion FL211 are electrically connected at low impedance by a firstmetal interconnection corresponding to storage terminal Nb throughcontact holes. Gate PL1 is also electrically connected to n-typediffusion region FL212.

Referring mainly to FIGS. 12 and 13, p-type diffusion regions FL112 andFL113 are electrically connected to separate first metalinterconnections through contact holes. Each of the separate first metalinterconnections is electrically connected to a second metalinterconnection serving as VDD potential through first via hole T1.

N-type diffusion region FL220 is electrically connected to a first metalinterconnection through a contact hole. The first metal interconnectionis electrically connected to a second metal interconnection serving aswrite word line WBL of the first port through first via hole T1. N-typediffusion region FL221 is electrically connected to a first metalinterconnection through a contact hole, and the first metalinterconnection is electrically connected to a second metalinterconnection serving as write bit line /WBL of the first port throughfirst via hole T1. N-type diffusion region FL200 is electricallyconnected to a first metal interconnection though a contact hole, andthe first metal interconnection is electrically connected to a secondmetal interconnection serving as ground line GND1 through first via holeT1.

N-type diffusion region FL230 is electrically connected to a first metalinterconnection through a contact hole, and the first metalinterconnection is electrically connected to a second metalinterconnection serving as read bit line RBL of the second port throughfirst via hole T1. N-type diffusion region FL201 is electricallyconnected to a first metal interconnection through a contact hole, andthe first metal interconnection is electrically connected to a secondmetal interconnection serving as ground line GND1 through first via holeT1. N-type diffusion region FL202 is electrically connected to a firstmetal interconnection through a contact hole, and the first metalinterconnection is electrically connected to a second metalinterconnection serving as ground line GND2 through first via hole T1.

All the second metal interconnections arranged within the memory cellregion are arranged parallel to each other, and extend in the directionparallel to the boundary line between n-type well NW and p-type well PW0and the boundary line between n-type well NW and p-type well PW1.

Gate PL3 is electrically connected to a first metal interconnectionthrough a contact hole, and the first metal interconnection iselectrically connected to a second metal interconnection through firstvia hole T1. The second metal interconnection is electrically connectedto a third metal interconnection serving as write word line WWL of thefirst port through second via hole T2. Gate PL4 is electricallyconnected to a first metal interconnection through a contact hole, andthe first metal interconnection is electrically connected to a secondmetal interconnection through first via hole T1. The second metalinterconnection is electrically connected to a third metalinterconnection serving as read word line RWL of the second port throughsecond via hole T2.

All the third metal interconnections arranged within the memory cellregion are also arranged parallel to each other, and extend in thedirection orthogonal to the boundary line between n-type well NW andp-type well PW0 and the boundary line between n-type well NW and p-typewell PW1.

The layout configuration of memory cells MC1 and MC2 adjacent to eachother will now be described.

Referring to FIGS. 12 and 13, the planar layout configuration from thetransistor formation layer to the second metal interconnection layer ofmemory cell MC2 adjacent to memory cell MC1 is line-symmetric to theplanar layout of memory cell MC1 with respect to the boundary line (lineX—X) between-memory cell MC1 and memory cell MC2. Therefore, GND1 line,GND2 line, VDD line, and bit lines WBL, /WBL, RBL formed of the secondmetal interconnection layer are shared between the adjacent memory cells(for example, between MC1 and MC2).

On the other hand, the planar layout configuration of each of the secondvia hole T2 and the third metal interconnection layer of memory cell MC2adjacent to memory cell MC1 is the same as the planar layoutconfiguration of memory cell MC1. More specifically, in both memory cellMC1 and memory cell MC2, word lines RWL1, RWL2 formed of the third metalinterconnection layer connected to the second port are arranged aboveword lines WWL1, WWL2, respectively, formed of the third metalinterconnection layer connected to the first port, in the figure. Inother words, each of word lines RWL1, RWL2 formed of the third metalinterconnection layer connected to the second port and each of wordlines WWL1, WWL2 formed of the third metal interconnection layerconnected to the first port are arranged alternately.

The memory cell layout configured as described above can reduce thenoise on word lines due to the coupling capacitance, as described in thefirst embodiment, and can prevent a malfunction without increasing thememory cell area.

(Fourth Embodiment)

The present embodiment relates to a CAM (Content Addressable Memory).Recently, increased speed of computers requires cache memory to bemounted on chips. Since it takes much time to access a bulk memoryexternal to a chip, a CPU is accelerated by employing a scheme in whichdata stored in a certain address space in that external memory istransferred to a fast cache memory within the chip. In doing so, it isnecessary to make a search instantaneously to see whether data istransferred to the cache memory. It is a content addressable memory thathas this comparing and matching search function.

Referring to FIG. 15, a memory cell has two driver transistors N1, N2,two load transistors P1, P2, two access transistors N3, N4, and nMOStransistors N5–N7. Each of two driver transistors N1, N2 and two accesstransistors N3, N4 is formed of an nMOS transistor. Each of two loadtransistors P1, P2 is formed of a pMOS transistor.

NMOS transistor N1 and pMOS transistor P1 constitute a first CMOSinverter I1, and nMOS transistor N2 and pMOS transistor P2 constitute asecond CMOS inverter I2. A flip-flop circuit and storage nodes Na, Nbare formed by connecting the output terminal of one of first and secondinverters I1, I2 to the input terminal of the other.

The source of each of driver transistors N1, N2 is connected to a GNDpotential, and the source of each of load transistors P1, P2 isconnected to a VDD potential.

The source, gate, and drain of nMOS transistor N3 is connected to onestorage terminal Na, word line WL and one positive-phase bit line BL,respectively. The source, gate, and drain of nMOS transistor N4 areconnected to the other storage terminal Nb, word line WL, and the othernegative-phase bit line /BL, respectively.

An internal node Nc is formed by electrically connecting the drains ofnMOS transistors N5, N6 to each other. The source and gate of nMOStransistor N5 are connected to a search line SL and storage node Nb,respectively. The source and gate of nMOS transistor N6 are electricallyconnected to a search line /SL and storage node Na, respectively. Thegate, source, and drain of nMOS transistor N7 are connected to internalnode Nc, a ground line GND2, and a match line ML, respectively. Thecontent addressable memory is thus configured.

It is noted that match line ML transmits a signal indicating that searchdata and storage data match or mismatch.

A comparison operation of the content addressable memory will now bedescribed.

In the initial state, the search line pair SL and /SL both are at “L”level. Assuming that data at storage nodes Na, Nb are at “H” level and“L” level, respectively, nMOS transistor N6 is in ON state and nMOStransistor N5 is in OFF state. Therefore, internal node Nc iselectrically connected with search line /SL through nMOS transistor N6and goes to “L” level. Since nMOS transistor N7 is in OFF state, matchline ML is electrically cut off from ground line GND2. Match line ML isprecharged to “H” level in advance.

Upon the start of the comparison operation, either search line SL or /SLis driven from “L” level to “H” level in accordance with the data to becompared. Now assume that, as search data, search line SL is kept at “L”level and search line /SL is driven to “H” level, in order to make acomparison as to whether data held at storage node Na is “H” or “L”.Then, as nMOS transistor N5 is in OFF state and nMOS transistor N6 is inON state, internal node Nc electrically connected to search line /SLgoes to “H” level, and nMOS transistor N7 enters ON state. Match line MLbecomes electrically connected to ground line GND2 through nMOStransistor N7. Therefore, match line ML changes from the initial state“H” level to “L” level, resulting in information indicative of differentcomparison.

On the other hand, assume that, as search data, search line /SL is keptat “L” level and search line SL is driven to “H” level. In this case,internal node Nc goes to “L” level as it is electrically connected tosearch line /SL through nMOS transistor N6. NMOS transistor N7 is in OFFstate, match line ML is electrically cut off from ground potential GND2,and match line ML is held at “H” level that is an initial prechargestate. Information indicative of equal comparison thus results.Thereafter, search line pair SL and /SL both are driven back to “L”level, and match line ML is precharged again to “H” level, therebycompleting the comparison operation.

It is noted that the normal reading and writing operations will not bedescribed for convenience of illustration.

Referring to FIG. 16, in the present embodiment, a word line and a matchline extend parallel to each other for each row. The planar layouts ofthe word line and match line are line-symmetric to each other in theadjacent rows with respect to the boundary line (the dotted line)between the adjacent rows. More specifically, in the first and secondrows adjacent to each other, match line ML0 in the first row and matchline ML1 in the second row are adjacent to each other, and in the secondand third rows adjacent to each other, word line WL1 in the second rowand word line WL2 in the third row are adjacent to each other. Thisconfiguration is repeated. Therefore, the word lines and match lines areplanarly arranged in the order of word line WL0, match line ML0, matchline ML1, word line WL1, word line WL2, and match line ML2, from abovein FIG. 16.

In accordance with the present embodiment, the word lines and matchlines planarly arranged as described above can reduce the effect ofcoupling noise between interconnections as shown in FIG. 17, similarlyto the first embodiment. This will be described below.

The problem with the content addressable memory occurs when match lineML is precharged after the completion of the match comparison operation.In the match comparison operation, most of match lines ML that have beenprecharged to “H” level in advance change to “H” level. The match lineML in the row where a match occurs (at most only one row) holds “L”level, while all the match lines ML change to “L” level where a mismatchoccurs. After the completion of the match comparison operation, thematch line is precharged to “H” level again, and therefore most of matchlines ML change from “L” level to “H” level.

Consider a case where match lines ML1 and ML2 in FIG. 17 are prechargedagain after going to “L” level, by way of example. During the matchcomparison operation, the reading and writing operations are notperformed at the same time. Therefore, all word lines WL0–WL2 are set at“L” level. When match lines ML1 and ML2 change from “L” level to “H”level, word lines WL1 and WL2 adjacent to each other also tend to changefrom “L” level to “H” level, because of coupling capacitance C3 and C5.However, word lines WL0–WL2, none of which are selected, are driven to“L” level by the word line driver circuit (not shown), and even if thepotential is raised from “L” level momentarily, it soon returns to “L”level again. In other words, even if match line ML1 adjacent to wordline WL1 on one side changes from “L” level to “H” level, the potentialon word line WL2 adjacent on the other side hardly changes.

Therefore, due to the changed potential on match line ML1 on one side ofword line WL1, word line WL1 is affected by coupling capacitance C3between word line WL1 and match line ML1. Coupling capacitance C4between word line WL1 and word line WL2 does not affect the potential onword line WL1, since the potential on word line WL2 on the other side ofword line WL1 remains constant at “L” level. Accordingly, in the presentembodiment, since word line WL1 is less affected by the couplingcapacitance, as shown in FIG. 17, it is possible to reduce the couplingnoise and can prevent a malfunction without increasing the memory cellarea.

By contrast, if the word lines and the match lines were arranged inorder as shown in the two-port memory in the first embodiment, theinterconnections adjacent on both sides of each word line would be mathlines, resulting in that the word line is affected by the coupling noisebetween the match lines on the opposite sides.

In this way, the present embodiment allows the coupling noise betweenthe interconnections to be reduced without increasing the memory cellarea, similarly to the first embodiment.

The planar layout configuration of the aforementioned contentaddressable memory cell will now be described.

First, the layout configuration of memory cell MC1 of one bit will bedescribed.

Referring to FIGS. 15, 18 and 19, the layout configuration in thisembodiment mainly differs from the configuration shown in FIGS. 11–13 inthat nMOS transistors N5–N8 for the content addressable memory areprovided in place of nMOS transistors N5, N6 constituting the read-onlyport and in that search line pair SL, /SL and match line ML are providedin place of read bit line RBL and read word line RWL.

Referring mainly to FIG. 18, each of nMOS transistors N5–N7 for thecontent addressable memory is formed within p-type well PW1. NMOStransistor N5 has the source and drain formed of a pair of n-typediffusion regions FL230, FL203, and gate PL1. NMOS transistor N6 has thesource and drain formed of a pair of n-type diffusion regions FL202,FL203, and gate PL2. NMOS transistor N7 has the source and drain formedof a pair of n-type diffusion regions FL204, FL205, and gate PL4.

N-type diffusion regions FL203 of nMOS transistors N5 and N6 are formedof a common diffusion region and are electrically connected to gate PL4by first metal interconnection Nc through contact holes. Gate PL1 ofnMOS transistor N5, gate PL1 of nMOS transistor N1, and gate PL1 of pMOStransistor P1 are formed of a common doped polysilicon interconnection.Gate PL2 of nMOS transistor N6, gate PL2 of nMOS transistor N2, and gatePL2 of pMOS transistor P2 are formed of a common doped polysiliconinterconnection.

Referring to FIGS. 18 and 19, n-type diffusion region FL230 iselectrically connected to a first metal interconnection through acontact hole, and the first metal interconnection is electricallyconnected to a second metal interconnection serving as search line SLthrough first via hole T1. N-type diffusion region FL202 is electricallyconnected to a first metal interconnection through a contact hole, andthe first metal interconnection is electrically connected to a secondinterconnection serving as search line /SL through first via hole T1.N-type diffusion region FL204 is electrically connected to a first metalinterconnection through a contact hole, and the first metalinterconnection is electrically connected to a second metalinterconnection serving as ground line GND2 through first via hole T1.These second metal interconnections extend parallel to each other.

N-type diffusion region FL205 is electrically connected to a first metalinterconnection through a contact hole, the first metal interconnectionis electrically connected to a second metal interconnection throughfirst via hole T1, and the second metal interconnection is electricallyconnected to a third metal interconnection serving as match line MLthrough second via hole T2. This match line ML extends parallel to wordline WL.

The layout configuration of memory cells MC1 and MC2 adjacent to eachother will now be described.

Referring to FIGS. 18 and 19, the planar configuration from thetransistor formation layer to the third metal interconnection layer ofmemory cell MC2 adjacent to memory cell MC1 is line-symmetric to theplanar layout of memory cell MC1 with respect to the boundary linebetween memory cell MC1 and memory cell MC2 (line X—X). Accordingly,GND1 line, GND2 line, VDD line, and bit lines WBL, /WBL, RBL formed ofthe second metal interconnection layer are shared between the adjacentmemory cells (for example, between MC1 and MC2).

In the first and second rows adjacent to each other, match line ML0 inthe first row and match line ML1 in the second row are arranged adjacentto each other, and in the second and third rows adjacent to each other,word line WL1 in the second row and word line WL2 in the third row arearranged adjacent to each other.

It is noted that since the other layout configuration is generally thesame as the configuration in FIGS. 12 and 13, the same components aredenoted with the same reference characters and description thereof willnot be repeated.

The memory cell layout configured as described above can reduce thenoise on the word lines due to the coupling capacitance and can preventa malfunction without increasing the memory cell area.

(Fifth Embodiment)

Referring to FIG. 20, a configuration of an equivalent circuit in thepresent embodiment differs from the configuration in the fourthembodiment shown in FIG. 15 in that nMOS transistor N8 is additionallyprovided. The gate, source, and drain of nMOS transistor N8 areelectrically connected to internal node Nc, ground potential GND2, andmatch line ML, respectively.

It is noted that since the other configuration of the equivalent circuitis generally the same as the configuration shown in FIG. 15, the samecomponents are denoted with the same reference characters anddescription thereof will not be repeated.

In the present embodiment, the planar layouts of the word line and matchline are line-symmetric to each other in the adjacent rows with respectto the boundary line between the adjacent rows (the dotted line) asshown in FIG. 16, similarly to the fourth embodiment. More specifically,in the first and second rows adjacent to each other, match line ML0 inthe first row and match line ML1 in the second row are adjacent to eachother, and in the second and third rows adjacent to each other, wordline WL1 in the second row and word line WL2 in the third row areadjacent to each other. The word lines and the match lines are planarlyarranged in the order of word line WL0, match line ML0, match line ML1,word line WL1, word line WL2, and match line ML2, from above in FIG. 16.

The word lines and match lines planarly arranged in this manner canreduce the effect of the coupling noise between interconnections asshown in FIG. 21, similarly to the fourth embodiment.

In addition, the addition of nMOS transistor N8 can accelerate theswitching of the potential on match line ML, thereby increasing thespeed of the comparison operation.

The planar layout configuration of the aforementioned contentaddressable memory cell will now be described.

Referring to FIG. 22, the layout configuration in the present embodimentmainly differs from the configuration in FIGS. 18 and 19 in that nMOStransistor N8 is additionally provided.

NMOS transistor N8 is formed within p-type well PW1. NMOS transistor N8has the source and drain formed of a pair of n-type diffusion regionsFL206, FL205, and gate PL4.

N-type diffusion regions FL205 of nMOS transistors N7 and N8 are formedof a common diffusion region, and gates PL4 thereof are formed of acommon doped polysilicon interconnection.

Referring to FIGS. 22 and 23, n-type diffusion regions FL204 and FL206are electrically connected to separate first metal interconnectionsthrough contact holes, and each of the separate first metalinterconnections is electrically connected to a second metalinterconnection serving as ground line GND2 through a first via hole.

It is noted that since the other configuration is generally the same asthe configuration in FIGS. 18 and 19, the same components are denotedwith the same reference characters and description thereof will not berepeated.

(Sixth Embodiment)

Although word lines WLA and WLB have been described as being formed onthe same insulating layer in the second and third embodiments, word lineWLA and word line WLB may be formed on different layers as shown in FIG.24. Specifically, an insulating layer 52 may be formed on word line WLAformed on an insulating layer 51, and word line WLB may be formed oninsulating layer 52. Alternatively, insulating layer 52 may be formed onword line WLB formed on insulating layer 51, and word line WLA may beformed on insulating layer 52. In other words, one of word line WLA andword line WLB may be arranged below insulating layer 52, and the otherof word line WLA and word line WLB may be arranged above insulatinglayer 52. This can further reduce the coupling capacitance.

In addition, although word line WL and match line ML have been describedas being formed on the same insulating layer in the fourth and fifthembodiments, word line WL and match line ML may be formed on differentinsulating layers as shown in FIG. 24. Specifically, insulating layer 52may be formed on word line WL formed on insulating layer 51, and matchline ML may be formed on insulating layer 52. Alternatively, insulatinglayer 52 may be formed on match line ML formed on insulating layer 51,and word line WL may be formed on insulating layer 52. In other words,one of word line WL and match line ML may be arranged below insulatinglayer 52, and the other of word line WL and match line ML may bearranged above insulating layer 52. This can further reduce the couplingcapacitance.

Although in the first to fifth embodiments above, MOS transistor hasbeen employed as a transistor, the transistor may be an MIS (MetalInsulator Semiconductor). As the conductivity type of each transistor,p-type and n-type may be reversed.

Although in the first to third embodiments above, a two-port memory cellhas been described, the present invention can be applied to a multiportmemory cell having two or more ports.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

1. A semiconductor memory device, comprising: a memory cell array inwhich a plurality of memory cells are arranged in columns and rows, eachof said memory cells having a first access transistor receiving andtransmitting data in correspondence with a first port having a firstinput/output group and a second access transistor receiving andtransmitting data in correspondence with a second port having a secondinput/output group; a plurality of first word lines connected inrespective rows to said first access transistors of said plurality ofmemory cells arranged in the row direction of said memory cell array; aplurality of second word lines connected in respective rows to saidsecond access transistors of said plurality of memory cells arranged inthe row direction of said memory cell array; a first port word driverarranged on one side of said memory cell array to drive said first wordline and a second port word driver arranged on other side of said memorycell array to drive said second word line, said memory cell array beinginterposed between said first and second port word drivers in the rowdirection, wherein said first word line and said second word line arearranged alternately in the column direction of said memory cell array.2. The semiconductor memory device according to claim 1, wherein each ofsaid plurality of memory cells has a first region in which a transistorof a first conductivity type including said first access transistor isformed, a second region provided adjacent to said first region in saidrow direction and constituting each of said memory cells, and in which atransistor of a second conductivity type is formed, and a third regionprovided adjacent to said second region in said row direction and inwhich a transistor of the first conductivity type including said secondaccess transistor is formed.
 3. The semiconductor memory deviceaccording to claim 2, wherein a gate electrode of each of saidtransistors constituting each of said memory cells extends in adirection toward which said first word line and said second word lineextend.